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PMDPB65UP Datasheet, NXP Semiconductors

PMDPB65UP mosfet equivalent, dual p-channel mosfet.

PMDPB65UP Avg. rating / M : 1.0 rating-12

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PMDPB65UP Datasheet

Features and benefits


* Trench MOSFET technology
* 1.8 V RDSon rated for low voltage gate drive
* 1 kV ElectroStatic Discharge (ESD) protection
* Small and leadless ultra thin .

Application


* Charging switch for portable devices
* DC-to-DC converters
* Small brushless DC motor drive
* Power ma.

Description

Dual small-signal P-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin SOT1118 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits
* Trench MOSFET technolo.

Image gallery

PMDPB65UP Page 1 PMDPB65UP Page 2 PMDPB65UP Page 3

TAGS

PMDPB65UP
Dual
P-Channel
MOSFET
PMDPB1S6P01
PMDPB28UN
PMDPB30XN
NXP Semiconductors

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